smd type ic www.kexin.com.cn 1 smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features very low on-state resistance q101 compliant 175 rated standard level compatible. absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 75 v drain-gate voltage r gs =20k v dgr 75 v gate-source voltage v gs v drain current (dc) t mb =25 ,v gs =10v i d 159 a drain current (dc) t mb = 100 ,v gs =10v i d 75 a drain current (pulse peak value) *1 i dm 638 a total power dissipation t mb =25 p tot 300 w storage & operating temperature t stg ,t j -55to175 159 a 75 a pulsed reverse drain current *1 i drm 638 a non-repetitive avalanche energy *2 e ds(al)s 852 j thermal resistance junction to mounting base r th j-mb 0.5 k/w thermal resistance junction to ambient r th j-a 50 k/w *1tmb=25 ; pulsed; tp 10 s; *2 unclamped inductive load; i d =75a;v ds 75 v; v gs =10v;r gs = 50;starting t mb =25 i dr reverse drain current (dc) t mb =25 trenchmos tm standard level fet KUK7606-75B
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i d =0.25ma;v gs =0v;t j =25 75 v i d =0.25ma;v gs =0v;t j =-55 70 v i d =1ma;v ds =v gs ;t j =25 234v i d =1ma;v ds =v gs ;t j =175 1v i d =1ma;v ds =v gs ;t j =-55 4.4 v v ds =30v;v gs =0v;t j =25 0.02 1 a v ds =30v;v gs =0v;t j = 175 500 a gate-source leakage current i gss v gs = 20 v; v ds =0v 2 100 na v gs =10v;i d =25a;t j =25 4.8 5.6 m v gs =10v;i d =25a;t j =175 11.8 m total gate charge q g(tot) 91 nc gate-to-source charge q gs 19 nc gate-to-drain (miller) charge q gd 28 nc input capacitance c iss 5585 7446 pf output capacitance c oss 845 1014 pf reverse transfer capacitance c rss 263 360 pf turn-on delay time t d(on) 36 ns rise time t r 56 ns turn-off delay time t d(off) 128 ns fall time t f 48 ns from drain lead 6 mm from package to centre of die 4.5 nh 2.5 nh internal source inductance l s from source lead to source bond pad 7.5 nh source-drain (diode forward) voltage v sd i s = 40a; v gs = 0 v 0.85 1.2 v reverse recovery time t rr i s =20a;-d if /d t = -100 a/s; 86 ns recovered charge q r v gs =-10v;v ds =30v 253 nc drain-source breakdown voltage v (br)dss v gs(th) gate-source threshold voltage r dson drain-source on-state resistance zero gate voltage drain current i dss v gs =10v;v dd =60v;i d =25a l d internal drain inductance v gs =0v;v ds =25v;f=1mhz v dd =30v;r l =1.2;v gs =10v;r g =10 KUK7606-75B
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